10 sec steady state v ds v gs 3.5 3 2.8 2.4 i dm 2 1.4 1.3 0.9 i ar e ar t j , t stg symbol typ max t 10s 48 62.5 steady-state 74 90 steady-state r q jl 33 40 maximum junction-to-lead c c/w parameter units maximum junction-to-ambient a r q ja c/w maximum junction-to-ambient a c/w junction and storage temperature range -55 to 150 c thermal characteristics avalanche current b 8 a repetitive avalanche energy 0.3mh b 9.6 mj power dissipation t a =25c p d w t a =70c continuous drain current a t a =25c i d a t a =70c pulsed drain current b 20 drain-source voltage 60 v gate-source voltage 20 v absolute maximum ratings t a =25c unless otherwise noted parameter symbol maximum units AO4852 60v dual n-channel mosfet product summary v ds (v) = 60v i d = 3.5a (v gs = 10v) r ds(on) <90m w (v gs = 10v) r ds(on) <105m w (v gs = 4.5v) 100% uis tested 100% rg tested general description the AO4852 uses advanced trench technology to provide excellent r ds(on) and low gate charge. as a pair these mosfets operate very efficiently in push pull and bridge topologies. soic-8 top view bottom view pin1 g2 d2 s2 g1 d1 s1 g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 86 7 top view
AO4852 symbol min typ max units bv dss 60 v 1 t j =55c 5 i gss 100 na v gs(th) 1.7 2.3 2.6 v i d(on) 20 a 79 90 t j =125c 146 159 86 105 m w g fs 15 s v sd 0.8 1 v i sm 20 a i s 2.5 a c iss 372 450 pf c oss 31 pf c rss 17 pf r g 1.7 2.6 w q g (10v) 7.1 9.2 nc q g (4.5v) 3.6 nc q gs 1 nc q gd 2 nc t d(on) 4.1 5.3 ns t r 2.1 ns t d(off) 15 ns t f 2.1 ns t rr 23.4 29 ns q rr 23.2 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice v gs =10v, v ds =30v, r l =10 w , r gen =3 w gate drain charge reverse transfer capacitance v gs =0v, v ds =30v, f=1mhz switching parameters m w v gs =4.5v, i d =2a i s =1a,v gs =0v v ds =5v, i d =3a v gs =10v, i d =3a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage drain-source breakdown voltage i d =250 m a, v gs =0v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v gs =10v, v ds =5v v ds =v gs i d =250 m a v ds =60v, v gs =0v v ds =0v, v gs = 20v pulsed body-diode current b body diode reverse recovery time gate resistance v gs =0v, v ds =0v, f=1mhz i f =3a, di/dt=100a/ m s output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =30v, i d =3a total gate charge on state drain current maximum body-diode continuous current input capacitance body diode reverse recovery charge i f =3a, di/dt=100a/ m s total gate charge gate source charge turn-on rise time turn-off delaytime turn-off fall time a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user 's specific board design. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using < 300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev1: nov. 2010 alpha & omega semiconductor, ltd. www.aosmd.com
AO4852 typical electrical and thermal characteristics 0 4 8 12 16 20 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 6v 10v 4.5v 0 4 8 12 16 2 2.4 2.8 3.2 3.6 4 v gs (volts) figure 2: transfer characteristics i d (a) 45 55 65 75 85 95 105 0 2 4 6 8 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v vgs=4.5v id=2a 0 30 60 90 120 150 180 2 3 4 5 6 7 8 9 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =3a 25c 125c i d =3a alpha & omega semiconductor, ltd. www.aosmd.com
AO4852 typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 0 10 20 30 40 50 60 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 5 10 15 20 25 30 35 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q qq q ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc t j(max) =150c t a =25c r ds(on) limited v ds =30v i d =3a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s alpha & omega semiconductor, ltd. www.aosmd.com
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